OMNIFET：全自动保护功率MOSFET

The VND5N07-E is a monolithic device designed using STMicroelectronics®VIPower®M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.\n\n Faul • Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the power mosfet (analog driving) \n• Compatible with standard Power M;

ST

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fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

文件：618.45 Kbytes 页数：24 Pages

STMICROELECTRONICS

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK

STMICROELECTRONICS

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OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

文件：166.99 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

文件：166.99 Kbytes 页数：15 Pages

STMICROELECTRONICS

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OMNIFET II fully autoprotected Power MOSFET

Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir

文件：504.27 Kbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体