首页 >VNB35N07TR-E>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
VNB35N07TR-E | OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower®technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
VNB35N07TR-E | OMNIFET: fully autoprotected Power MOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower®technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
VNB35N07TR-E | 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:集成电路(IC) 配电开关,负载驱动器 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower®technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower®technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower®technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET DESCRIPTION TheVNP35N07isamonolithicdevicemadeusingSGS-THOMSONVerticalIntelligentPowerM0Technology,intendedforreplacementofstandardpowerMOSFETSinDCto50KHzapplications.Built-inthermalshut-down,linearcurrentlimitationandovervoltageclampprotectthechipinharsh | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFET:FULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower®technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower®technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower®technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower®technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
?쒹MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFETFULLYAUTOPROTECTEDPOWERMOSFET Description TheVNP35N07-E,VNB35N07-EandVNV35N07-EaremonolithicdevicesmadeusingSTMicroelectronicsVIPower®technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthe | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower®technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
OMNIFET:fullyautoprotectedPowerMOSFET Description TheVNP35N07-E,VNB35N07-Eand VNV35N07-Earemonolithicdevicesmadeusing STMicroelectronicsVIPower®technology, intendedforreplacementofstandardPower MOSFETsinDCto50KHzapplications. Built-inthermalshutdown,linearcurrentlimitation andovervoltageclampprotect | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS |
产品属性
- 产品编号:
VNB35N07TR-E
- 制造商:
STMicroelectronics
- 类别:
集成电路(IC) > 配电开关,负载驱动器
- 系列:
OMNIFET™, VIPower™
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 开关类型:
通用
- 输出数:
1
- 比率 - 输入:
1:1
- 输出配置:
低端
- 输出类型:
N 通道
- 接口:
开/关
- 电压 - 负载:
55V(最大)
- 电压 - 供电 (Vcc/Vdd):
不需要
- 电流 - 输出(最大值):
25A
- 导通电阻(典型值):
28 毫欧(最大)
- 输入类型:
非反相
- 特性:
状态标志
- 故障保护:
限流(固定),超温,过压
- 安装类型:
表面贴装型
- 供应商器件封装:
D2PAK
- 封装/外壳:
TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
- 描述:
IC PWR DRIVER N-CHAN 1
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-263 |
5000 |
实单必成原装正品假一罚十 |
询价 | ||
STMicroelectronics |
23+ |
D2PAK |
25717 |
英飞凌电源管理芯片-原装正品 |
询价 | ||
ST |
22+ |
TO-263 |
5000 |
原装、公平又符合市场标准 |
询价 | ||
ST |
21+ |
TO-263 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ST |
22+ |
TO-263-3 |
296 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
22+ |
D2PAK-3 |
6001 |
原装正品现货 可开增值税发票 |
询价 | ||
STM |
23+ |
TO-263-3 (D2PAK) |
10 |
原装现货支持送检 |
询价 | ||
ST |
TO263 |
5000 |
有挂就有正品原装 |
询价 | |||
ST |
21+ |
TO-263 |
5731 |
面向全世界客户,原装现货亿万库存 |
询价 | ||
ST(意法) |
2023 |
10000 |
全新、原装 |
询价 |
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