Double channel high side driver for automotive applications

Features ■ General – Inrush current active management by power limitation – Very low stand-by current – 3.0V CMOS compatible input – Optimized electromagnetic emission – Very low electromagnetic susceptibility – In compliance with the 2002/95/EC European directive ■ Diagnostic functions

文件：506.91 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Double channel high side driver for automotive applications

文件：529 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

Double channel high side driver for automotive applications

Features ■ General – Inrush current active management by power limitation – Very low stand-by current – 3.0V CMOS compatible input – Optimized electromagnetic emission – Very low electromagnetic susceptibility – In compliance with the 2002/95/EC European directive ■ Diagnostic functions

文件：506.91 Kbytes 页数：31 Pages

STMICROELECTRONICS

意法半导体

面向汽车应用的双通道高侧驱动器

The VND5160J-E is a monolithic device made using STMicroelectronics VIPower M0-5 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility tabl • GeneralInrush current active management by power limitationVery low stand-by current3.0V CMOS compatible inputOptimized electromagnetic emissionVery low electromagnetic susceptibilityIn compliance with the 2002/95/EC European directive \n• ProtectionUndervoltage shut-downOvervoltage clampOutput st;

ST

意法半导体

Package：PowerSSO-12；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRVR N-CHAN 1:1 PWRSSO12

STMICROELECTRONICS

意法半导体