ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件：191.48 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

ISO high side smart power solid state relay

文件：297.16 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold:

文件：41.82 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0605T N-Channel Enhancement-Mode MOS Transistor

FEATURES • Low rDS(on)

文件：23.39 Kbytes 页数：2 Pages

CALOGIC

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

文件：434.02 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

文件：384.34 Kbytes 页数：3 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

文件：434.02 Kbytes 页数：2 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

文件：384.34 Kbytes 页数：3 Pages

SUTEX

N-Channel Enhancement-Mode MOS Transistors

FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification

文件：24.51 Kbytes 页数：2 Pages

CALOGIC

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

文件：202.12 Kbytes 页数：4 Pages

TEMIC