16Mb CMOS Synchronous Dynamic RAM

Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current hi

文件：943.34 Kbytes 页数：70 Pages

VML

世界先进

16Mb CMOS Synchronous Dynamic RAM

Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current hi

文件：943.34 Kbytes 页数：70 Pages

VML

世界先进

16Mb CMOS Synchronous Dynamic RAM

Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current hi

文件：943.34 Kbytes 页数：70 Pages

VML

世界先进

16Mb CMOS Synchronous Dynamic RAM

Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current hi

文件：943.34 Kbytes 页数：70 Pages

VML

世界先进

16Mb CMOS Synchronous Dynamic RAM

Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current hi

文件：943.34 Kbytes 页数：70 Pages

VML

世界先进

16Mb CMOS Synchronous Dynamic RAM

VIS

世界先进

16Mb CMOS Synchronous Dynamic RAM

Description\nThe VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current high-s • Single 3.3V +/- 0.3V power supply\n• Fully synchronous with all signals referenced to a positive clock edge\n• Programmable burst length (1,2,4,8,& Full page)\n• Automatic precharge and controlled precharge\n• Dual internal banks controlled by A11(Bank select)\n• I/O level : LVTTL interface\n• X16;

Vergiga

威兆半导体

16Mb CMOS Synchronous Dynamic RAM

Vergiga

威兆半导体