16Mb CMOS Synchronous Dynamic RAM

Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current hi

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VMLVanguard International Semiconductor

世界先进世界先进集成电路股份有限公司

16Mb CMOS Synchronous Dynamic RAM

Description\nThe VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern for current high-s • Single 3.3V +/- 0.3V power supply\n• Fully synchronous with all signals referenced to a positive clock edge\n• Programmable burst length (1,2,4,8,& Full page)\n• Automatic precharge and controlled precharge\n• Dual internal banks controlled by A11(Bank select)\n• I/O level : LVTTL interface\n• X16;

Vergiga

威兆半导体

FUDAN
SOP8

Fudan

上海复旦微

上传：深圳市冠亿通科技有限公司

VLSI
PLCC

VLSI

上传：深圳市昌和盛利电子有限公司