VF20200C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VF20200C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VF20200C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VF20200C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VF20200C-E3

Trench MOS Schottky technology

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VF20200C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VF20200C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VF20200C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VF20200C-E3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VF20200C-E3/4W

Package：TO-220-3 全封装，隔离接片；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 200V ITO220

Vishay General Semiconductor - Diodes Division