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VF20200C-E3

Trench MOS Schottky technology

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VF20200C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

VF20200C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VF20200C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

VF20200C-E3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VF20200C-E3/4W

Package:TO-220-3 全封装,隔离接片;包装:管件 类别:分立半导体产品 二极管 - 整流器 - 阵列 描述:DIODE ARRAY SCHOTTKY 200V ITO220

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

V20200C-E3

TrenchMOSSchottkytechnology

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

V20200C-E3

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

VB20200C-E3

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

VB20200C-E3

TrenchMOSSchottkytechnology

UltraLowVF=0.60VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathte

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    VF20200C-E3

  • 功能描述:

    肖特基二极管与整流器 20 Amp 200 Volt Dual TrenchMOS

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 产品:

    Schottky Diodes

  • 峰值反向电压:

    2 V

  • 正向连续电流:

    50 mA

  • 配置:

    Crossover Quad

  • 正向电压下降:

    370 mV

  • 最大功率耗散:

    75 mW

  • 工作温度范围:

    - 65 C to + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOT-143

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
VISHAY/威世
23+
TO220F
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY
17+
TO220F-3
6200
询价
VISHAY
25+23+
TO-220
28410
绝对原装正品全新进口深圳现货
询价
VISHAY
20+
TO220F-3
38560
原装优势主营型号-可开原型号增税票
询价
VISHAY
24+
TO-220F
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
GENERALSEMICONDUCTORVISHAY
24+
NA
749
原装现货,专业配单专家
询价
VISHAY/威世
23+
TO-220F
30000
全新原装现货,价格优势
询价
VISHAY
1809+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
GENERALSEMICONDUCTORVISHAY
21+
NA
1820
只做原装,一定有货,不止网上数量,量多可订货!
询价
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
更多VF20200C-E3供应商 更新时间2025-5-5 11:10:00