丝印：VF；Package：SOD-323；Single Zener diodes

文件：127.73 Kbytes 页数：14 Pages

恩XP

丝印：VF；Package：DFN-41x1；LOW NOISE 150mA LDO REGULATOR

文件：510 Kbytes 页数：32 Pages

RICOH

理光

丝印：VF；Package：DO-214AC；5.0 to 440Volts 400Watts SMD TRANSIENT VOLTAGE SUPPRESSORS

文件：298.7 Kbytes 页数：5 Pages

ZSELEC

淄博圣诺

Useful of 4,000 hours at 85ºC

Features • Ripple current increased by 10 by new heat radiation construction with HCGF6A series.

文件：95.03 Kbytes 页数：6 Pages

AICTECH

Useful of 4,000 hours at 85ºC

Features • Ripple current increased by 10 by new heat radiation construction with HCGF6A series.

文件：95.03 Kbytes 页数：6 Pages

AICTECH

Useful of 4,000 hours at 85ºC

Features • Ripple current increased by 10 by new heat radiation construction with HCGF6A series.

文件：95.03 Kbytes 页数：6 Pages

AICTECH

Useful of 4,000 hours at 85ºC

Features • Ripple current increased by 10 by new heat radiation construction with HCGF6A series.

文件：95.03 Kbytes 页数：6 Pages

AICTECH

Useful of 4,000 hours at 85ºC

Features • Ripple current increased by 10 by new heat radiation construction with HCGF6A series.

文件：95.03 Kbytes 页数：6 Pages

AICTECH

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO-

文件：168.07 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：127.45 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司