| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VF10150C | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- 文件：168.07 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VF10150C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：127.45 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VF10150C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：723.43 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VF10150C | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.64 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
VF10150C | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：161.64 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：127.45 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- 文件：168.07 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 (for TO-220AB, ITO- 文件：168.07 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：78.64 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：79.37 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay |
详细参数
- 型号：
VF10150C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
20+ |
TO-220F |
20000 |
原装正品真实现货杜绝虚假 |
询价 | ||
VISHAY/威世 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
3750 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY/威世 |
24+ |
TO-220F |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
VISHAY/威世 |
24+ |
TO-220F |
12000 |
原装正品真实现货杜绝虚假 |
询价 | ||
VISHAY/威世 |
25+ |
TO-220F |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
VISHAY |
25+23+ |
TO-220F |
16357 |
绝对原装正品全新进口深圳现货 |
询价 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
ITO220AB |
9000 |
原厂渠道,现货配单 |
询价 |
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