Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

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VishayVishay Siliconix

威世威世科技公司

High voltage power Schottky rectifier

Features • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: – TO-220FPAB insulating voltage = 2000VRMS sine • ECOPACK®2 compliant component for D²PAK on deman

文件：304.67 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：150.03 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

SOT89

Honeywell

霍尼韦尔

上传：深圳市粤科源兴科技有限公司

NA

CUI

上传：深圳市恒佳微电子有限公司