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VBT10200C

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

文件:145.78 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VBT10200C-E3

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

文件:161.6 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VBT10200C-E3

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packa

文件:202.16 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世

VBT10200C-E3

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件:315.58 Kbytes 页数:2 Pages

ISC

无锡固电

VBT10200C-E3-4W

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

文件:145.78 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VBT10200C-E3-8W

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package

文件:145.78 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VBT10200C-E3

Trench MOS Barrier Schottky Rectifier

文件:151.68 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

VBT10200C

Trench MOS Barrier Schottky Rectifier

Vishay

威世

VBT10200C-E3/4W

肖特基二极管与整流器 10A 200V TrenchMOS

Vishay

威世

VBT10200C-E3/8W

肖特基二极管与整流器 10A 200V TrenchMOS

Vishay

威世

详细参数

  • 型号:

    VBT10200C

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
25+
TO-263
3675
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Semiconductor Diodes Di
22+
TO263AB
9000
原厂渠道,现货配单
询价
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
询价
VISHAY(威世)
24+
TO263
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
Vishay Semiconductor Diodes Di
23+
TO263AB
8000
只做原装现货
询价
24+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
询价
Vishay General Semiconductor -
25+
TO-263-3 D?Pak(2 引线 + 接片
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
Vishay
24+
NA
3000
进口原装正品优势供应
询价
更多VBT10200C供应商 更新时间2025-10-13 11:04:00