VBT10200C-E3-4W中文资料威世数据手册PDF规格书

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

    For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.