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ATI2305CGFADJ

DC-DCConverter

FEATURES Efficiencyupto96 Only40μA(TYP.)QuiescentCurrent OutputCurrentupto1A InternalSynchronousRectifier SwitchingFrequency:1.5MHz Under-VoltageLockout SoftStart ShortCircuitProtection ThermalShutdown 5-pinSmallSOT23-5,DFN2X26-PinandQFN3X3

ANALOGTECHNOLOGIESAnalog Technologies, Inc.

ANALOGTECHNOLOGIESAnalog Technologies, Inc.

BC2305

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

BLM2305

P-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海贝岭上海贝岭股份有限公司

BU2305

CRtimer

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU2305F

CRtimer

ROHMRohm Semiconductor

罗姆罗姆半导体集团

CEH2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=65mW@VGS=-4.5V. RDS(ON)=119mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2305

P-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEH2305A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4.9A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4A,RDS(ON)=55mW@VGS=-10V. RDS(ON)=70mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2305

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=70mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CES2305A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-4A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHM2305PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO

CHENMKO

CIT2305

SelfDrivePiezoTransducer(AC)

CANOPUSCanopus Electronics (H.K.) Ltd.

Canopus Electronics (H.K.) Ltd.

CJ2305

SOT-23Plastic-EncapsulateMOSFETS

ZPSEMI

ZP Semiconductor

CJ2305

P-ChannelMOSFET

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

CJK2305

P-Channel8-V(D-S)MOSFET

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

CJK2305

P-Channel12-V(D-S)MOSFET

ZPSEMI

ZP Semiconductor

CM2305

T-13/4Bi-PinBase(.125)

CMLCML

CML

CM2305

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CMLCML

CML

CMM2305

800TO2700MHZBROADBANDDRIVERAMPLIFIER

[CELERITEK] Description TheCeleritekCMM2305isaflexiblebroadbanddriveramplifier.Packagedinaminiaturelow-costMSOP-8package,thisdeviceisidealforcellularandPCShandsetswherespaceandefficiencyareprimaryconcerns. Applications ❐CellularHandsets ❐PCSHandsets

ETCList of Unclassifed Manufacturers

未分类制造商

供应商型号品牌批号封装库存备注价格
VBsemi(台湾微碧)
2112+
TO252
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
VBSEMI-微碧
24+25+/26+27+
车规-场效应管
43788
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
23+
N/A
98000
一级代理放心采购
询价
VBSEMI台湾微碧
23+
TO-252
22820
原装正品,支持实单
询价
VBSEMI/台湾微碧
24+23+
TO252
12580
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
V
23+
TO-252
10000
公司只做原装正品
询价
V
TO-252
22+
6000
十年配单,只做原装
询价
V
22+
TO-252
25000
只做原装进口现货,专注配单
询价
IXYSCORPORATION
10
全新原装 货期两周
询价
IXYS
23+
DIODEBRIDGEFASTDIODEECO-
1690
专业代理销售半导体模块,能提供更多数量
询价
更多VBE2305供应商 更新时间2024-6-6 15:00:00