| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：168.56 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.88 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：139.41 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.97 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
VB30100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.13 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 文件：213.12 Kbytes 页数：6 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Schotty Barrier Diode FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter 文件：321.03 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：168.56 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：168.56 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A Ultra Low VF = 0.39 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath te 文件：168.56 Kbytes 页数：5 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VB30100S
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-263 |
501511 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
DIODES/美台 |
23+ |
ITO-220A |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
VISHAY/威世 |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
询价 | ||
VISHAY/威世 |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
询价 | ||
Vishay(威世) |
23+ |
N/A |
11800 |
询价 | |||
VISHAY |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
Vishay(威世) |
24+ |
N/A |
11800 |
可配单提供样品 |
询价 | ||
Vishay(威世) |
25+ |
N/A |
8800 |
公司只做原装,详情请咨询 |
询价 | ||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
VISHAY/威世 |
2450+ |
TO263 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
询价 |
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