H-Bridge MOSFET Modules

·Vdss: 100V - 600V, Id(25): 38A - 63A \n·Low Rds(on): 25.0 mOhms\n·dv/dt ruggedness. Fast reverse diode\n·low inductive current path\n·Kelvin source terminals for easy drive\n·Isolated ceramic base plate with 2500 V rms isolation;

Littelfuse

力特

Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge

文件：54.12 Kbytes 页数：3 Pages

IXYS

艾赛斯

Small Signal Schottky Diodes

Features - Epoxy meets UL-94 V-0 flammability rating. - Moisture sensitivity Level 1. - AEC-Q101 Qualified. - Low forward voltage schottky rectifier.

文件：487.25 Kbytes 页数：4 Pages

COMCHIP

典琦

Surface Mount Schottky Barrier Diodes

Features ● Low Turn–on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD    Protection Applications    Fast switches in thick and thin film circuits

文件：56.88 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The diodes BAS40, BAS40-04, BAS40-05 and BAS40-06 are encapsulated in a SOT23 small plastic SMD package. The BAS40-07 is encapsulat

文件：58.61 Kbytes 页数：8 Pages

PHI

PHI