OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

文件：321.31 Kbytes 页数：16 Pages

TI

德州仪器

丝印：VB244；Package：TVSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body

文件：683 Kbytes 页数：19 Pages

TI

德州仪器

丝印：VB244；Package：TVSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body

文件：683 Kbytes 页数：19 Pages

TI

德州仪器

丝印：VB244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body

文件：683 Kbytes 页数：19 Pages

TI

德州仪器

丝印：VB244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body

文件：683 Kbytes 页数：19 Pages

TI

德州仪器

丝印：VB244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body

文件：683 Kbytes 页数：19 Pages

TI

德州仪器

丝印：VB244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body

文件：683 Kbytes 页数：19 Pages

TI

德州仪器

丝印：VB244；Package：TSSOP；OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Operates From 1.65 V to 3.6 V · Max tpd of 2.8 ns at 3.3 V · ±24-mA Output Drive at 3.3 V · Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors · Latch-Up Performance Exceeds 250 mA Per JESD 17 · ESD Protection Exceeds JESD 22 – 2000-V Human-Body

文件：683 Kbytes 页数：19 Pages

TI

德州仪器

OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

TI

德州仪器

P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

文件：699.32 Kbytes 页数：9 Pages

VBSEMI

微碧半导体