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V8P10

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件:105.5 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P10_V01

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件:105.5 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P12

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件:99.73 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P12_V01

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件:99.73 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P15

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件:101.88 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P15_V01

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件:101.88 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P15HM3SLASHH

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:101.24 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P15HM3SLASHI

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:101.24 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P15-M3SLASHH

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:101.24 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V8P15-M3SLASHI

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.58 V at IF = 4 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件:101.24 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    V8P1

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
Vishay(威世)
2021/2022+
标准封装
6500
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
Vishay(威世)
25+
N/A
8800
公司只做原装,详情请咨询
询价
Vishay(威世)
2511
N/A
11800
电子元器件采购降本 30%!原厂直采,砍掉中间差价
询价
Vishay(威世)
23+
N/A
11800
询价
Vishay/GeneralSemiconduc
24+
SMPC
7500
询价
VISHAY
2016+
TO-277A
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
Vishay
24+
NA
3000
进口原装正品优势供应
询价
VISHHY
25+
SMPC3
2568
原装优势!绝对公司现货
询价
DO-227
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
VISHAY
25+23+
TO-277A(S
23464
绝对原装正品全新进口深圳现货
询价
更多V8P1供应商 更新时间2026-4-15 14:02:00