High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件：105.5 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：90.61 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：92.12 Kbytes 页数：5 Pages

VishayVishay Siliconix

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High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.466 V at IF = 4A

分立 Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件：105.5 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：92.12 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Trench MOS Barrier Schottky Rectifier

文件：554.92 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：86.56 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世