256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

文件：853.33 Kbytes 页数：52 Pages

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256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

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茂矽电子

256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

Description The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches mul

文件：838.59 Kbytes 页数：52 Pages

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茂矽电子

256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

Description The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches mul

文件：838.59 Kbytes 页数：52 Pages

MOSEL

茂矽电子

256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

Description The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches mul

文件：838.59 Kbytes 页数：52 Pages

MOSEL

茂矽电子

256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

Description The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches mul

文件：838.59 Kbytes 页数：52 Pages

MOSEL

茂矽电子

256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

Description The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches mul

文件：838.59 Kbytes 页数：52 Pages

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茂矽电子

LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16

Description The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a sy

文件：651.16 Kbytes 页数：45 Pages

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茂矽电子

LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16

Description The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a sy

文件：651.16 Kbytes 页数：45 Pages

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茂矽电子

256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4

Description The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches mul

文件：838.59 Kbytes 页数：52 Pages

MOSEL

茂矽电子