ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM

Description The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current. All inputs and outputs are TTL compatible. Input and output capacitances ar

文件：201.13 Kbytes 页数：18 Pages

MOSEL

茂矽电子

ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM

Description The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current. All inputs and outputs are TTL compatible. Input and output capacitances ar

文件：201.13 Kbytes 页数：18 Pages

MOSEL

茂矽电子

ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM

Description The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current. All inputs and outputs are TTL compatible. Input and output capacitances ar

文件：201.13 Kbytes 页数：18 Pages

MOSEL

茂矽电子

ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM

Description The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current. All inputs and outputs are TTL compatible. Input and output capacitances ar

文件：201.13 Kbytes 页数：18 Pages

MOSEL

茂矽电子

ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM

Description The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current. All inputs and outputs are TTL compatible. Input and output capacitances ar

文件：201.13 Kbytes 页数：18 Pages

MOSEL

茂矽电子

ULTRA-HIGH PERFORMANCE, 128K X 8EDO PAGE MODE CMOS DYNAMIC RAM

Mosel

茂矽电子

ULTRA-HIGH PERFORMANCE, 128K X 8 EDO PAGE MODE CMOS DYNAMIC RAM

Description\nThe V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current.\nAll inputs and outputs are TTL compatible. Input and output capacitances are ■ 128K x 8-bit organization\n■ RAS access time: 35, 40, 45, 50 ns\n■ EDO Page Mode supports sustained I/O data rates up to 71.5 MHz\n■ Low power dissipation\n   • V53C8129H-50\n      — Operating Current: 135 mA max\n      — TTL Standby Current: 2.0 mA max\n■ Low CMOS Standby Current: 1.0 mA max\n■ R;

Mosel

茂矽电子