128Mbit SDRAM 3.3 VOLT, BGA PACKAGE

Description The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bi

文件：871.51 Kbytes 页数：45 Pages

MOSEL

茂矽电子

128Mbit SDRAM 3.3 VOLT, BGA PACKAGE

Mosel

茂矽电子

128Mbit SDRAM 3.3 VOLT, BGA PACKAGE

Description The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bi

文件：871.51 Kbytes 页数：45 Pages

MOSEL

茂矽电子

128Mbit SDRAM 3.3 VOLT, BGA PACKAGE

Description The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bi

文件：871.51 Kbytes 页数：45 Pages

MOSEL

茂矽电子

128Mbit SDRAM 3.3 VOLT, BGA PACKAGE

Description The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bi

文件：871.51 Kbytes 页数：45 Pages

MOSEL

茂矽电子

HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8

文件：362.48 Kbytes 页数：43 Pages

MOSEL

茂矽电子

HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8

文件：362.48 Kbytes 页数：43 Pages

MOSEL

茂矽电子

HIGH PERFORMANCE 143/133/125MHz 3.3 VOLT 16M X 8 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 8

文件：362.48 Kbytes 页数：43 Pages

MOSEL

茂矽电子

128Mbit SDRAM 3.3 VOLT, BGA PACKAGE

Description The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits ■ 4 banks x 2Mbit x 16 organization\n■ 4 banks x 4Mbit x 8 organization\n■ 4 banks x 8Mbit x 4 organization\n■ High speed data transfer rates up to 166 MHz\n■ Full Synchronous Dynamic RAM, with all signals\n   referenced to clock rising edge\n■ Single Pulsed RAS Interface\n■ Data Mask for Read/Write;

Mosel

茂矽电子

SDRAM

ProMOS

茂德科技