V293EP

型号：SN74V293PZAEP；Package：LQFP；8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

ControlledBaseline –OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof –55°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† ChoiceofMemoryOrganizations –SN74V263–8192×1

V293EP

型号：SN74V293PZAEP.A；Package：LQFP；8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

ControlledBaseline –OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof –55°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† ChoiceofMemoryOrganizations –SN74V263–8192×1

V293EP

型号：V62/03639-04XE；Package：LQFP；8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

ControlledBaseline –OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof –55°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† ChoiceofMemoryOrganizations –SN74V263–8192×1

V293EP

型号：V62SLASH03639-04XE；Package：LQFP；8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

ControlledBaseline –OneAssembly/TestSite,OneFabrication Site ExtendedTemperaturePerformanceof –55°Cto125°C EnhancedDiminishingManufacturing Sources(DMS)Support EnhancedProduct-ChangeNotification QualificationPedigree† ChoiceofMemoryOrganizations –SN74V263–8192×1