High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.31 V at IF = 5 A FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C •

文件：120.05 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：131.57 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5 A

分立 Very low profile - typical height of 1.3 mm\nTrench MOS Schottky technology\nIdeal for automated placement;

Vishay

威世

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：131.57 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C •

文件：119.38 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：140.75 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：140.75 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

分立 Very low profile - typical height of 1.3 mm\nTrench MOS Schottky technology\nIdeal for automated placement;

Vishay

威世

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTT 45V SLIMDPAK

Vishay General Semiconductor - Diodes Division

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 45V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division