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V10P45

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

文件:86.81 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

文件:90.62 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件:104.58 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 5 A

Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世

V10P45_V01

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件:104.58 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45-13

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

文件:89.53 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45-86A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

文件:90.62 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45-87A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

文件:90.62 Kbytes 页数:6 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45HM3-86A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

文件:86.81 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

V10P45HM3-87A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.34 V at IF= 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency op

文件:86.81 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    V10P45

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY/威世
25+
TO-277
20300
VISHAY/威世原装特价V10P45即刻询购立享优惠#长期有货
询价
VISHAY
24+
TO-277A(SMPC)
5000
只做原装公司现货
询价
VISHAY
24+
SMD
5500
长期供应原装现货实单可谈
询价
TO-277A
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
VISHAY
25+23+
TO-277A(SMPC)
21531
绝对原装正品全新进口深圳现货
询价
VISHAY
19+
TO-277A(SMPC)
200000
询价
VISHAY/威世
24+
TO-277
98000
原装现货假一罚十
询价
VISHY
1132/13+
TO277
12000
普通
询价
VISHAY
25+
TO-277
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
21+
原厂封装
1975
询价
更多V10P45供应商 更新时间2026-1-7 18:41:00