V10P45HM3-87A中文资料威世科技数据手册PDF规格书

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low VF= 0.34 V at IF= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.