| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a 文件：126.55 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a 文件：126.55 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A 文件：125.52 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A 文件：125.52 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A 文件：125.5 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A 文件：125.5 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - 文件：111.2 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - 文件：111.2 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - 文件：111.24 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - 文件：111.24 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号：
V10
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
DZ23-V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
NA |
8486 |
专做原装正品,假一罚百! |
询价 | ||
VISHAY/威世 |
23+ |
SOT23 |
83500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
VISHAY |
23+ |
SOT-23 |
34142 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
VISHAY/威世 |
2026+ |
SOT-23 |
120 |
原装正品,假一罚十! |
询价 | ||
VISHAY/威世 |
25+ |
SOT-23 |
120 |
原装正品,假一罚十! |
询价 | ||
VISHAY |
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
PANJIT/强茂 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
PANJIT/强茂 |
24+ |
SOT-23 |
60000 |
全新原装现货 |
询价 | ||
xx |
2023+环保现货 |
SOT-23 |
30000 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
YANGJIE |
24+ |
SOT-23 |
50000 |
原厂直销全新原装正品现货 欢迎选购 |
询价 |
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