Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

文件：126.55 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology generation 2

文件：105.26 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

文件：126.55 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：94.63 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

分立 Trench MOS Schottky technology generation 2\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 200V 10A SMPD

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 200V SMPD

Vishay General Semiconductor - Diodes Division