V10D202C

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnologygeneration2 •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifieda

V10D202C

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier; Trench MOS Schottky technology generation 2\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

分立

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V10D202C

Trench MOS Schottky technology generation 2

V10D202C_V01

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnologygeneration2 •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifieda

V10D202C_15

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V10D202CHM3/I

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP

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V10D202CHM3_A/I

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 200V 10A SMPD

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V10D202C-M3/I

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 200V SMPD

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