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UTT10N10

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件:136.17 Kbytes 页数:3 Pages

UTC

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UTT10N10G-TN3-R

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件:136.17 Kbytes 页数:3 Pages

UTC

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UTT10N10G-TN3-T

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件:136.17 Kbytes 页数:3 Pages

UTC

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UTT10N10L-TN3-R

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件:136.17 Kbytes 页数:3 Pages

UTC

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UTT10N10L-TN3-T

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件:136.17 Kbytes 页数:3 Pages

UTC

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UTT120N04M

120A, 40V N-CHANNEL POWER

 DESCRIPTION The UTC UTT120N04M is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance and high switching speed.  FEATURES * RDS(ON) ≤ 3.9 mΩ @ VGS=10V, ID=60A RDS(ON) ≤ 7.8 mΩ @ VGS=4.5V, ID=60A * High switchin

文件:265.55 Kbytes 页数:6 Pages

UTC

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UTT1E101MPD1TD

iMOTION™ Modular Application Design Kit

Eval-M3-CM615PN is an evaluation board for motor drive applications with single phase PFC integrated 3 phase IPM. Combined in a kit with one of the available MADK control board options, it demonstrates Infineon’s motion control IC and IPM technology for motor drives with single phase PFC. Main

文件:1.75251 Mbytes 页数:41 Pages

INFINEON

英飞凌

UTT100N05

100A, 50V N-CHANNEL POWER MOSFET

文件:129.19 Kbytes 页数:3 Pages

UTC

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UTT100N05G-TA3-T

100A, 50V N-CHANNEL POWER MOSFET

文件:129.19 Kbytes 页数:3 Pages

UTC

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UTT100N05L-TA3-T

100A, 50V N-CHANNEL POWER MOSFET

文件:129.19 Kbytes 页数:3 Pages

UTC

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产品属性

  • 产品编号:

    UTT1E101MPD1TD

  • 制造商:

    Nichicon

  • 类别:

    电容器 > 铝电解电容器

  • 系列:

    UTT

  • 包装:

    剪切带(CT)带盒(TB)

  • 容差:

    ±20%

  • 不同温度时使用寿命:

    105°C 时为 5000 小时

  • 工作温度:

    -40°C ~ 105°C

  • 应用:

    通用

  • 引线间距:

    0.138"(3.50mm)

  • 大小 / 尺寸:

    0.315" 直径(8.00mm)

  • 高度 - 安装(最大值):

    0.413"(10.50mm)

  • 安装类型:

    通孔

  • 封装/外壳:

    径向,Can

  • 描述:

    CAP ALUM 100UF 20% 25V RADIAL

供应商型号品牌批号封装库存备注价格
NICHICON
25+
电容器
7926
就找我吧!--邀您体验愉快问购元件!
询价
NICHICON/尼吉康
2022+
DIP
92000
原厂代理 终端免费提供样品
询价
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
NICHICON/尼吉康
8X9
17787
询价
NICHICON/尼吉康
23+
5X7
66800
原装进口电解价格优势
询价
NICHICON/尼吉康
23+
AmmoPack
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
NICHICON/尼吉康
22+
DIP-2
9000
原装正品,支持实单!
询价
Nichicon
24+
DIP-2
39500
进口原装现货 支持实单价优
询价
NICHICON/尼吉康
16+
NA
12500
只做全新原装正品
询价
NICHICON/尼吉康
23+
NA
12730
原装正品代理渠道价格优势
询价
更多UTT1供应商 更新时间2021-9-14 10:50:00