10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件：136.17 Kbytes 页数：3 Pages

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10A, 100V N-CHANNEL MOSFET

The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speedand ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode. • RDS(on) =142mΩ @VGS = 10 V,ID=6.4A\n• High Switching Speed\n• Low CRSS (Typically 20pF)\n• Low Gate Charge(Typically 12nC);

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10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件：136.17 Kbytes 页数：3 Pages

UTC

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10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件：136.17 Kbytes 页数：3 Pages

UTC

友顺

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件：136.17 Kbytes 页数：3 Pages

UTC

友顺

10A, 100V N-CHANNEL MOSFET

■ DESCRIPTION The UTC UTT10N10 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode.

文件：136.17 Kbytes 页数：3 Pages

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N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：158.29 Kbytes 页数：3 Pages

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N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：158.29 Kbytes 页数：3 Pages

UTC

友顺

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：158.29 Kbytes 页数：3 Pages

UTC

友顺

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：158.29 Kbytes 页数：3 Pages

UTC

友顺