100V, 19A P-CHANNEL POWER MOSFET

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P-CHANNEL POWER MOSFET

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ALUMINUM ELECTROLYTIC CAPACITORS

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ALUMINUM ELECTROLYTIC CAPACITORS

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Trench Power MOSFET  (N-CH)

The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. • Fast switching speed \n• 100A, 60V, RDS(ON)= 7mΩ @ VGS=10V \n• Work below 175°C   \n• 100% avalanche tested \n• Improved dv/dt capability;

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100A, 65V N-CHANNEL POWER MOSFET

UTC UTT100N07 is a N-Channel enhancement mode powerfield effect transistors are using trench DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mo RDS(ON) < 2.8 mΩ @ VGS=10V, ID=20ARDS(ON) < 5.4 mΩ @ VGS=4.5V, ID=10A Improved dv/dt capability Fast switching 100% EAS Guaranteed;

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Trench Power MOSFET  (N-CH)

The UTC  UTT100N08M  is an N-channel Power MOSFET, it uses UTC’s advanced technology that is uniquely optimized to provide an extremely low on-state resistance and low gate charge, etc. The UTC UTT100N08M is suitable for synchronous rectification in SMPS, UPS, high speed power switching, etc. RDS(ON) < 10mΩ @ VGS=10V, ID=40AHigh power and current handling capabilityHigh speed switchingLow gate charge;

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Package：径向，Can；包装：带盒（TB） 类别：电容器 铝电解电容器 描述：CAP ALUM 150UF 20% 10V RADIAL

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Package：径向，Can；包装：剪切带（CT）带盒（TB） 类别：电容器 铝电解电容器 描述：CAP ALUM 150UF 20% 10V RADIAL

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Package：径向，Can；包装：散装 类别：电容器 铝电解电容器 描述：CAP ALUM 220UF 20% 10V RADIAL

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