| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TheG9014isdesignedforgeneralpurposeamplifierapplications | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
NPNEPITAXIALTRANSISTOR Description TheG9014isdesignedforgeneralpurposeamplifierapplications. | GTM 勤益投資控股股份有限公司 | GTM | ||
PChannelPowerMOSFET | GSGGunter Seniconductor GmbH. Gunter Seniconductor GmbH. | GSG | ||
ExcellentHFELinearityHFE:HFE(0.1mA)/hFE(2mA)=0.95(Typ.) | GSMEGuilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. | GSME | ||
NPNEPITAXIALTRANSISTOR | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
PNPEPITAXIALTRANSISTOR | GTM 勤益投資控股股份有限公司 | GTM | ||
NPNEPITAXIALTRANSISTOR | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
NPNEPITAXIALTRANSISTOR | GTM 勤益投資控股股份有限公司 | GTM | ||
NPNSILICONTRANSISTOR PRE-AMPLIFIER，LOWLEVEL&LOWNOISE | HuashanHuashan Electronic Devices Co 华汕电子器件 | Huashan | ||
GENERALPURPOSETRANSISTOR | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHE9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features •HighTotalPowerDissipation(PD:450mW) •ComplementarytoHE9015 •HighhFEandGoodLinearity | HSMC 华昕 | HSMC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheHMBT9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features •HighTotalPowerDissipation(PD:225mW) •ComplementarytoHMBT9015 •HighhFEandGoodLinearity | HSMC 华昕 | HSMC | ||
NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications????????? NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications | SEMTECH Semtech Corporation | SEMTECH | ||
PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.1A)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •ForautomaticInsertion •Endstackable •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •ForautomaticInsertion •Endstackable •P-channel •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFET짰POWERMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEWINORIGINAL |
2008++ |
SOT-23 |
57200 |
新进库存/原装 |
询价 | ||
UTC |
21+ |
SOT-23 |
6000 |
绝对原裝现货 |
询价 | ||
NEW IN ORIGINAL |
2022 |
SOT-23 |
57200 |
全新原装现货热卖 |
询价 | ||
UTC/友顺 |
2012 |
SOT-23 |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
UTC |
23+ |
SOT-23 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
UTC |
21+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
UTC |
05+ |
SOT-23 |
8500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
UTC |
SOT-23 |
396379 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
UTC |
05+ |
SOT-23 |
8500 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 |
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