NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications

文件：369.5 Kbytes 页数：5 Pages

SEMTECH

先之科

Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A)

文件：177.51 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat

文件：839.16 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

文件：858.54 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技