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UT3418

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON)

文件:149.45 Kbytes 页数:3 Pages

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UT3418

Trench Power MOSFET  (N-CH)

The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) < 60mΩ @VGS = 10 V \n•  RDS(ON) < 155m Ω @VGS = 2.5 V \n• Low gate charge \n• Avalanche energy specified;

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UT3418G-AE3-R

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件:492.79 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

UT3418G-AE3-R

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON)

文件:149.45 Kbytes 页数:3 Pages

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UT3418L-AE3-R

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件:492.11 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

UT3418L-AE3-R

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON)

文件:149.45 Kbytes 页数:3 Pages

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UT3418_15

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:173.14 Kbytes 页数:3 Pages

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UT3418G-AE3-R

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:173.14 Kbytes 页数:3 Pages

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技术参数

  • VGS(±V):

    ±12

  • ID(A):

    3.8

  • RDS(ON)MAX.(mΩ)atVGS=10V:

    60

  • RDS(ON)MAX.(mΩ)atVGS=4.5V:

    70

  • RDS(ON)MAX.(mΩ)atVGS=2.5V:

    140

  • CISSTYP.(pF):

    186

  • COSSTYP.(pF):

    31

  • CRSSTYP.(pF):

    24

  • QgTYP.(nC):

    7

  • QgsTYP.(nC):

    1.2

  • QgdTYP.(nC):

    0.6

  • VGS(th)(V)MIN.:

    0.6

  • VGS(th)(V)MAX.:

    1.8

  • Package:

    SOT-23_SOT-23-3_SOT-323

供应商型号品牌批号封装库存备注价格
U
23+
SOT-23
8650
受权代理!全新原装现货特价热卖!
询价
UTC
20+
SOT23-3
43000
原装优势主营型号-可开原型号增税票
询价
UTC/友顺
24+
SOT23-3
333652
MOS管优势产品热卖中
询价
UTC/友顺
24+
SOT-23
9600
原装现货,优势供应,支持实单!
询价
VBSEMI/台湾微碧
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
UTC/友顺
2022+
SOT-23
40000
原厂代理 终端免费提供样品
询价
UTC/友顺
23+
SOT23-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
UTC
15+
UTC/友顺
1342
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
UTC/友顺
22+
SOT-23
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
UTC/友顺
24+
NA/
6254
原厂直销,现货供应,账期支持!
询价
更多UT3418供应商 更新时间2025-10-13 14:04:00