型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
UT3418 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON) 文件:149.45 Kbytes 页数:3 Pages | UTC 友顺 | UTC | |
UT3418 | Trench Power MOSFET (N-CH) The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON) < 60mΩ @VGS = 10 V \n• RDS(ON) < 155m Ω @VGS = 2.5 V \n• Low gate charge \n• Avalanche energy specified; | UTC 友顺 | UTC | |
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter 文件:492.79 Kbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON) 文件:149.45 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter 文件:492.11 Kbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 60mΩ @ VGS = 10 V RDS(ON) ≤ 70mΩ @ VGS = 4.5 V RDS(ON) 文件:149.45 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:173.14 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:173.14 Kbytes 页数:3 Pages | UTC 友顺 | UTC |
技术参数
- VGS(±V):
±12
- ID(A):
3.8
- RDS(ON)MAX.(mΩ)atVGS=10V:
60
- RDS(ON)MAX.(mΩ)atVGS=4.5V:
70
- RDS(ON)MAX.(mΩ)atVGS=2.5V:
140
- CISSTYP.(pF):
186
- COSSTYP.(pF):
31
- CRSSTYP.(pF):
24
- QgTYP.(nC):
7
- QgsTYP.(nC):
1.2
- QgdTYP.(nC):
0.6
- VGS(th)(V)MIN.:
0.6
- VGS(th)(V)MAX.:
1.8
- Package:
SOT-23_SOT-23-3_SOT-323
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
U |
23+ |
SOT-23 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
UTC |
20+ |
SOT23-3 |
43000 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
UTC/友顺 |
24+ |
SOT23-3 |
333652 |
MOS管优势产品热卖中 |
询价 | ||
UTC/友顺 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
UTC/友顺 |
2022+ |
SOT-23 |
40000 |
原厂代理 终端免费提供样品 |
询价 | ||
UTC/友顺 |
23+ |
SOT23-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
UTC |
15+ |
UTC/友顺 |
1342 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
UTC/友顺 |
22+ |
SOT-23 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
UTC/友顺 |
24+ |
NA/ |
6254 |
原厂直销,现货供应,账期支持! |
询价 |
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