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9952

3MTMSingleCoatedMedicalPlasticTape

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

9952

Electronic,2C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt

ProductDescription Electronic,2Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket

BELDEN

Belden Inc.

AD9952

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD9952YSV

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

GENERALDESCRIPTION TheAD9952isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9952usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD9952YSV

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD9952YSVZ

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AE9952

Cat5eUTPPatchCable

ASSMANNASSMANN WSW COMPONENTS

ASSMANN WSW组件有限公司

AP9952GP-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AUIRF9952Q

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRF9952Q

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRF9952QTR

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AUIRF9952QTR

AdvancedPlanarTechnologyLowOn-Resistance

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

CEM9952A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■30V,3.7A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CHM9952AJPT

DualEnhancementModeFieldEffectTransistor

N-channel:VOLTAGE30VoltsCURRENT3.7Ampere P-channel:VOLTAGE30VoltsCURRENT2.9Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servomo

CHENMKOCHENMKO

CHENMKO

IRF9952

PowerMOSFET(Vdss=-30V)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952PBF

ULTRALOWONRESISTANCE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952QPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952QPBF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF9952QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET®PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetit

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
NEC
16+
BGA小
50000
绝对原装进口现货可开17%增值税发票
询价
NEC
05+
BGA
854
询价
NEC
22+
BGA小
770
原装现货热卖中,提供一站式真芯服务
询价
NEC
23+
BGA
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
NEC
2017+
BGA
32256
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
23+
N/A
85600
正品授权货源可靠
询价
NEC
21+
BGA
6000
绝对原裝现货
询价
只做原装
21+
BGA
36520
一级代理/放心采购
询价
NEC
23+
BGA
50000
全新原装正品现货,支持订货
询价
NEC
22+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
更多UPD9952GW供应商 更新时间2024-5-3 10:08:00