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UPD43256BGU-70L

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-70L

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-70L-A

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-70LL

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-70LL

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-70LL-A

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-85L

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-85L

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-85L-A

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-85LL

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-85LL

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-85LL-A

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A10

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A10

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A10-A

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A12

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A12

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A12-A

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A85

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD43256BGU-A85

MOS INTEGRATED CIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    UPD43256BGU

  • 制造商:

    Renesas Electronics Corporation

供应商型号品牌批号封装库存备注价格
NEC
2024+实力库存
SOP
5
只做原厂渠道 可追溯货源
询价
NEC
2022
SOP28
10
原厂原装正品,价格超越代理
询价
NEC
23+
SOP-28
19526
询价
NEC
22+
SOP
3000
强调现货,随时查询!
询价
NEC
9946
SMD
750
特价热销现货库存100%原装正品欢迎来电订购!
询价
NEC
22+
SOP-28
4650
询价
99
3000
自己现货
询价
NEC
2339+
SOP
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEC
23+
SOP28
2500
特价库存
询价
NEC
16+
SOP28
10
全新原装现货
询价
更多UPD43256BGU供应商 更新时间2024-6-4 16:36:00