首页 >UPD43256BGU-70L(A)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOSINTEGRATEDCIRCUIT Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BIT | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BIT | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BIT [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BIT | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSINTEGRATEDCIRCUIT Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSINTEGRATEDCIRCUIT Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
256K-BITCMOSSTATICRAM32K-WORDBY8-BIT | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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