5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 页数：16 Pages

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2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：126.21 Kbytes 页数：6 Pages

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5 V-BIAS, +17.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION\nThe µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is • Supply voltage : VCC = 4.5 to 5.5 V\n• Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor\n• Wideband response : fu = 2.0 GHz TYP. @ 3 dB bandwidth\n• Power gain : GP = 23 dB TYP. @ f = 500 MHz\n• Isolation : ISL = 35 dB TYP. @ f = 500 MHz;

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5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 页数：16 Pages

NEC

瑞萨

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：126.21 Kbytes 页数：6 Pages

NEC

瑞萨

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 页数：16 Pages

NEC

瑞萨

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 页数：16 Pages

NEC

瑞萨

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

文件：94.35 Kbytes 页数：16 Pages

NEC

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

文件：461.82 Kbytes 页数：18 Pages

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丝印：1678；Package：SSOP；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

文件：461.82 Kbytes 页数：18 Pages

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