NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：118.18 Kbytes 页数：4 Pages

NEC

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NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER

DESCRIPTION\nNEC's UPC1688G is a silicon monolithic integrated circuit specifically designed as a flat gain, wide band amplifier cover ing the HF through the UHF band. It is particularly suited for low cost high performance amplifier applications.\nNEC's stringent quality assurance and test procedur • FLAT GAIN: ∆GP = ±1 dB TYP from 100 to 700 MHz\n• 1000 MHz FREQUENCY RESPONSE AT 3 dB DOWN\n• 21 dB POWER GAIN AT 500 MHz\n• SINGLE 5 VOLT SUPPLY\n• NO EXTERNAL BIAS COMPONENTS REQUIRED\n• LOW COST PACKAGE\n• 50 Ω GAIN BLOCK\n• AVAILABLE IN TAPE AND REEL ;

Renesas

瑞萨

NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER

DESCRIPTION\nNEC's UPC1688G is a silicon monolithic integrated circuit specifically designed as a flat gain, wide band amplifier cover ing the HF through the UHF band. It is particularly suited for low cost high performance amplifier applications.\nNEC's stringent quality assurance and test procedur • FLAT GAIN: ∆GP = ±1 dB TYP from 100 to 700 MHz\n• 1000 MHz FREQUENCY RESPONSE AT 3 dB DOWN\n• 21 dB POWER GAIN AT 500 MHz\n• SINGLE 5 VOLT SUPPLY\n• NO EXTERNAL BIAS COMPONENTS REQUIRED\n• LOW COST PACKAGE\n• 50 Ω GAIN BLOCK\n• AVAILABLE IN TAPE AND REEL ;

CEL

丝印：C1C；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Flat gain: DGP = ±1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain : 21 dBTYP. @ 0.5 GHz • Supply voltage : 5 V ± 0.5 V • 4 pin mini mold package

文件：207.01 Kbytes 页数：10 Pages

RENESAS

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丝印：C1C；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Flat gain: DGP = ±1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain : 21 dBTYP. @ 0.5 GHz • Supply voltage : 5 V ± 0.5 V • 4 pin mini mold package

文件：207.01 Kbytes 页数：10 Pages

RENESAS

瑞萨

丝印：C1C；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Flat gain: DGP = ±1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain : 21 dBTYP. @ 0.5 GHz • Supply voltage : 5 V ± 0.5 V • 4 pin mini mold package

文件：207.01 Kbytes 页数：10 Pages

RENESAS

瑞萨

NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：118.18 Kbytes 页数：4 Pages

NEC

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5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC

文件：56.2 Kbytes 页数：8 Pages

NEC

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5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC

文件：56.2 Kbytes 页数：8 Pages

NEC

瑞萨

5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC

文件：56.2 Kbytes 页数：8 Pages

NEC

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