UPC1678数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

DESCRIPTION
The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.FEATURES
• Supply voltage : VCC = 4.5 to 5.5 V
• Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor
• Wideband response : fu = 2.0 GHz TYP. @ 3 dB bandwidth
• Power gain : GP = 23 dB TYP. @ f = 500 MHz
• Isolation : ISL = 35 dB TYP. @ f = 500 MHzAPPLICATIONS
• PA driver for high frequency system.

特性 Features

• Supply voltage : VCC = 4.5 to 5.5 V
• Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor
• Wideband response : fu = 2.0 GHz TYP. @ 3 dB bandwidth
• Power gain : GP = 23 dB TYP. @ f = 500 MHz
• Isolation : ISL = 35 dB TYP. @ f = 500 MHz