UPC1678G-E1中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Supply voltage : VCC = 4.5 to 5.5 V

• Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor

• Wideband response : fu = 2.0 GHz TYP. @ 3 dB bandwidth

• Power gain : GP = 23 dB TYP. @ f = 500 MHz

• Isolation : ISL = 35 dB TYP. @ f = 500 MHz

APPLICATIONS

• PA driver for high frequency system.