MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)

文件：275.23 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)

文件：275.23 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A) RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)

文件：275.23 Kbytes 页数：8 Pages

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瑞萨

NPN SILICON BIAS RESISTOR TRANSISTOR

文件：150.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

NPN SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

文件：263.56 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

Bias Resistor Transistors

文件：166.36 Kbytes 页数：18 Pages

ONSEMI

安森美半导体