N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：140.59 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2450B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2

文件：275.13 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：140.59 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2450B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2

文件：275.13 Kbytes 页数：10 Pages

RENESAS

瑞萨