N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA2451B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2451B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2451B is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2

文件：380.53 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.

文件：292.74 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：182.03 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA2451 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

文件：206.96 Kbytes 页数：10 Pages

RENESAS

瑞萨