P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1917 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V driv

文件：73.48 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1917 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V d

文件：208.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Renesas

瑞萨

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：456.77 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1917 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V driv

文件：73.48 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1917 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V d

文件：208.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

Pch Single Power Mosfet -20V -6A 53Mohm 6Pin Tmm/Sc-95

The UPA1917TE is a Pch Single Power Mosfet -20V -6A 53Mohm 6Pin Tmm/Sc-95. • 1.8 V drive available\n• Low on-state resistance RDS(on)1 = 53 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A) RDS(on)2 = 70 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A) RDS(on)3 = 107 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日UPA1917 Data Shee;

Renesas

瑞萨