uP1966A中文资料Dual-Channel Gate Driver for Enhancement Mode GaN Transistors数据手册uPI(UBIQ)规格书

描述 Description

The uP1966A is designed to effectively drive both the highsideand the low-side enhancement mode GalliumNitride(GaN) FETs in a Half and Full-Bridge application.The floating high-side driver is capable operating up to 80Vand it is uses double input for driving two N-channel GaNFETs.

The uP1966A has two separate gate outputs allowingindependent adjust of the turn-on and turn-off capability byadding impedance for gate loop. It features fast-switchingspeed and minimium propagation delays, and consequentlyfacilitates high-frequency operation.The uP1966A can operate up to several MHz. This devicealso supports supply input under voltage lockout. TheuP1966A uses WLCSP-12L that offers a compact footprintand minimizes package inductance.

特性 Features

·0.4Ω/0.7Ω Pull-Down/Pull-Up Resistance
·Fast Propagation Delays (15ns, Typical)
·Fast Rise and Fall Times (8ns/4ns, Typical)
·Adjustable Output for Turn-On/Turn-Off Ability
·CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
·Under Voltage Lockout for Supply Input
·WLCSP-12L Package
·RoHS Compliant and Halogen Free

应用 Application

·Half-Bridge and Full-Bridge Converters
·High Input Voltage Converters
·Wireless Power