Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

文件：589.42 Kbytes 页数：9 Pages

UPI

力智电子

Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

文件：589.42 Kbytes 页数：9 Pages

UPI

力智电子

Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

The uP1966A is designed to effectively drive both the highsideand the low-side enhancement mode GalliumNitride(GaN) FETs in a Half and Full-Bridge application.The floating high-side driver is capable operating up to 80Vand it is uses double input for driving two N-channel GaNFETs.\n\n The uP1966A ·0.4Ω/0.7Ω Pull-Down/Pull-Up Resistance\n ·Fast Propagation Delays (15ns, Typical)\n ·Fast Rise and Fall Times (8ns/4ns, Typical)\n ·Adjustable Output for Turn-On/Turn-Off Ability\n ·CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)\n ·Under Voltage Lockout for Supply Input\n ·WL;

uPI(UBIQ)

力智电子

MULTIFUNCTION SYNTHESIZER

文件：2.24394 Mbytes 页数：188 Pages

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