MULTILAYER CHIP VARISTORS

Feature SMD type zinc oxide based ceramic chip Insulator over coat keeps excellent low and stable leakage current Plating termination provided good solderability characteristic Quick response time (

文件：2.72018 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

RF Power Amplifier Module

RF Power Amplifier Module For the preamplifier of the transmitting section in a cellular phone ■ Features • High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm)

文件：23.47 Kbytes 页数：1 Pages

PANASONIC

松下

RF Power Amplifier Module

RF Power Amplifier Module For the preamplifier of the transmitting section in a cellular phone ■ Features • High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm)

文件：23.46 Kbytes 页数：1 Pages

PANASONIC

松下

丝印：UN0301N；Package：SOP-8；N-Channel Enhancement Mode MOSFET

Feature Proprietary Trench Gate Device Design and Processes 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications Power Management in Load Switch Motor control and drive Lithium battery protection General Purpose

文件：4.43134 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN0301P；Package：SOP-8；P-Channel Enhancement Mode MOSFET

Feature Proprietary Trench Gate Device Design and Processes 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications Power Management in Load Switch Motor control and drive Lithium battery protection General Purpose

文件：4.69972 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN0302P；Package：TO-252；P-Channel Enhancement Mode MOSFET

Feature Proprietary Trench Gate Device Design and Processes 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications Power Management in Load Switch Motor control and drive Lithium battery protection General Purpose

文件：4.11176 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN0306N；Package：SOP-8；N-Channel Enhancement Mode MOSFET

Feature Proprietary Trench Gate Device Design and Processes 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System Industrial and Motor Drive applications General Purpose

文件：4.39987 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN0308N；Package：SOP-8；N-Channel Enhancement Mode MOSFET

Feature Proprietary Trench Gate Device Design and Processes 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System Industrial and Motor Drive applications General Purpose

文件：4.45217 Mbytes 页数：9 Pages

UNSEMI

优恩半导体

丝印：UN0309N；Package：TO-252；N-Channel Enhancement Mode MOSFET

Feature Very Low On-resistance RDS(ON) Low Crss Fast switching 100 avalanche tested Improved dv/dt capability Applications PWM Application Load Switch Power Management

文件：4.54934 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：UN0315N；Package：DFN5x6-8L；N-Channel Enhancement Mode MOSFET

Feature Proprietary Trench Gate Device Design and Processes Extremely low on-resistance RDS(ON) 100 Avalanche Tested Reliable and Rugged RoHS compliant Applications DC/DC Converter Battery Management System Industrial and Motor Drive applications Synchronous rectifier applications

文件：4.28364 Mbytes 页数：9 Pages

UNSEMI

优恩半导体