| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.8A) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
AvailableinTapeandReel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.8A) Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. •Surface | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •P-channel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •P-channel •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPOWERMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPOWERMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PWMPOWERMOSCONTROLLER DESCRIPTION TheL9610C/11CisamonolithicintegratedcircuitworkinginPWMmodeascontrollerofanexternalpowerMOStransistorinHighSideDriverconfiguration. Featuresofthedeviceincludecontrolledslopeoftheleadingandtrailingedgeofthegatedrivingvoltage,linearcurrentlimiti | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
PWMPOWERMOSCONTROLLER DESCRIPTION TheL9610C/11CisamonolithicintegratedcircuitworkinginPWMmodeascontrollerofanexternalpowerMOStransistorinHighSideDriverconfiguration. Featuresofthedeviceincludecontrolledslopeoftheleadingandtrailingedgeofthegatedrivingvoltage,linearcurrentlimiti | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
1μA,μDFN/SC70,Lithium-IonBattery,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim | ||
1μA,μDFN/SC70,Lithium-IonBattery,PrecisionCurrent-SenseAmplifier | MaximMaximIntegrated 美信半导体 | Maxim |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ICS |
24+ |
QFN |
159333 |
明嘉莱只做原装正品现货 |
询价 | ||
ICS |
2016+ |
PBFREE |
5632 |
只做进口原装正品!现货或者订货一周货期!只要要网上有 |
询价 | ||
NXP |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
询价 | ||
ICS |
2016+ |
QFN |
1800 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ICS |
23+ |
QFN |
1020 |
特价库存 |
询价 | ||
ICS |
2020+ |
09+PB |
292 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ICS |
QFN |
17432 |
提供BOM表配单只做原装货值得信赖 |
询价 | |||
ICS |
23+ |
QFN |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ICS |
22+23+ |
QFN48 |
27471 |
绝对原装正品全新进口深圳现货 |
询价 | ||
QFP |
260 |
100%原装正品!现货热价热卖!可开17%增值税票! |
询价 |
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