OBUDOWS CE 81

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ETCList of Unclassifed Manufacturers

未分类制造商

OBUDOWS CE 81

文件：143.54 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MOS FET WITH SCHOTTKY BARRIER DIODE

DESCRIPTION The μ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applicatio

文件：215.97 Kbytes 页数：10 Pages

RENESAS

瑞萨

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications s

文件：79.94 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FET WITH SCHOTTKY BARRIER DIODE

DESCRIPTION The μ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applicatio

文件：215.97 Kbytes 页数：10 Pages

RENESAS

瑞萨